Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes

被引：8
|
作者：
Gu, Hong [1 ,2 ]
Tian, Feifei [3 ]
Zhang, Chunyu [3 ]
Xu, Ke [3 ]
Wang, Jiale [1 ]
Chen, Yong [1 ]
Deng, Xuanhua [1 ]
Liu, Xinke [1 ]
机构：
[1] Shenzhen Univ, Chinese Engn & Res Inst Microelect, Shenzhen Key Lab Special Funct Mat, Coll Mat Sci & Engn,Guangdong Res Ctr Interfacial, Shenzhen 518060, Peoples R China
[2] Shenzhen Univ, Coll Optoelect Engn, Minist Educ & Guangdong Prov, Key Lab Optoelect Devices & Syst, Shenzhen 518060, Peoples R China
[3] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China
来源：
NANOSCALE RESEARCH LETTERS | 2019年 / 14卷 / 1期
关键词：
Vertical SBDs; Ge-doped GaN substrates; Reverse recovery time; HVPE; BREAKDOWN VOLTAGE;
D O I：
10.1186/s11671-019-2872-7
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates. The crystal quality of the SBDs was characterized by cathode luminescence measurement, and the dislocation density was determined to be similar to 1.3x10(6)cm(-2). With the electrical performance measurements conducted, the SBDs show a low turn-on voltage V-on (0.70 similar to 0.78V) and high current I-on/I-off ratio (9.9x10(7)similar to 1.3x10(10)). The reverse recovery characteristics were investigated. The reverse recovery time was obtained to be 15.8, 16.2, 18.1, 21.22, and 24.5ns for the 100-, 200-, 300-, 400-, and 500-m-diameter SBDs, respectively. Meanwhile, the reverse recovery time and reverse recovery charge both show a significant positive correlation with the electrode area.
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页数：6
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