Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes

被引：8
|
作者：
Gu, Hong [1 ,2 ]
Tian, Feifei [3 ]
Zhang, Chunyu [3 ]
Xu, Ke [3 ]
Wang, Jiale [1 ]
Chen, Yong [1 ]
Deng, Xuanhua [1 ]
Liu, Xinke [1 ]
机构：
[1] Shenzhen Univ, Chinese Engn & Res Inst Microelect, Shenzhen Key Lab Special Funct Mat, Coll Mat Sci & Engn,Guangdong Res Ctr Interfacial, Shenzhen 518060, Peoples R China
[2] Shenzhen Univ, Coll Optoelect Engn, Minist Educ & Guangdong Prov, Key Lab Optoelect Devices & Syst, Shenzhen 518060, Peoples R China
[3] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China
来源：
NANOSCALE RESEARCH LETTERS | 2019年 / 14卷 / 1期
关键词：
Vertical SBDs; Ge-doped GaN substrates; Reverse recovery time; HVPE; BREAKDOWN VOLTAGE;
D O I：
10.1186/s11671-019-2872-7
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates. The crystal quality of the SBDs was characterized by cathode luminescence measurement, and the dislocation density was determined to be similar to 1.3x10(6)cm(-2). With the electrical performance measurements conducted, the SBDs show a low turn-on voltage V-on (0.70 similar to 0.78V) and high current I-on/I-off ratio (9.9x10(7)similar to 1.3x10(10)). The reverse recovery characteristics were investigated. The reverse recovery time was obtained to be 15.8, 16.2, 18.1, 21.22, and 24.5ns for the 100-, 200-, 300-, 400-, and 500-m-diameter SBDs, respectively. Meanwhile, the reverse recovery time and reverse recovery charge both show a significant positive correlation with the electrode area.
引用
收藏
页数：6
相关论文
共 50 条
  • [1] Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes
    Hong Gu
    Feifei Tian
    Chunyu Zhang
    Ke Xu
    Jiale Wang
    Yong Chen
    Xuanhua Deng
    Xinke Liu
    Nanoscale Research Letters, 2019, 14
  • [2] Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates
    Gu, Hong
    Hu, Cong
    Wang, Jiale
    Lu, Youming
    Ao, Jin-Ping
    Tian, Feifei
    Zhang, Yi
    Wang, Maojun
    Liu, Xinke
    Xu, Ke
    JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 780 : 476 - 481
  • [3] Fast Recovery Performance of Vertical GaN Schottky Barrier Diodes on Low-Dislocation-Density GaN Substrates
    Ueno, Masaki
    Yoshimoto, Susumu
    Ishihara, Kuniaki
    Okada, Masaya
    Sumiyoshi, Kazuhide
    Hirano, Hidenori
    Mitsuhashi, Fuminori
    Yoshizumi, Yusuke
    Ishizuka, Takashi
    Kiyama, Makoto
    2014 IEEE 26TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), 2014, : 309 - 312
  • [4] Vertical GaN Junction Barrier Schottky Diodes
    Koehler, Andrew D.
    Anderson, Travis J.
    Tadjer, Marko J.
    Nath, Anindya
    Feigelson, Boris N.
    Shahin, David I.
    Hobart, Karl D.
    Kub, Francis J.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (01) : Q10 - Q12
  • [5] Vertical GaN Schottky barrier diodes with micrometer pillar Schottky contacts
    Zhu, Renqiang
    Li, Bo
    Li, Shuai
    Ma, Zhengweng
    Yang, Huakai
    He, Shijie
    Huang, Shuangwu
    Xiong, Xinbo
    Chiu, Hsien-Chin
    Li, Xiaohua
    Zhang, Bo
    Liu, Xinke
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2025, 58 (10)
  • [6] Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes
    Raja, P. Vigneshwara
    Raynaud, Christophe
    Sonneville, Camille
    N'Dohi, Atse Julien Eric
    Morel, Herve
    Phung, Luong Viet
    Ngo, Thi Huong
    De Mierry, Philippe
    Frayssinet, Eric
    Maher, Hassan
    Tasselli, Josiane
    Isoird, Karine
    Morancho, Fredric
    Cordier, Yvon
    Planson, Dominique
    MICROELECTRONICS JOURNAL, 2022, 128
  • [7] Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes
    Binder, Andrew T.
    Pickrell, Greg W.
    Alterman, Andrew A.
    Dickerson, Jeramy R.
    Yates, Luke
    Steinfeldt, Jeffrey
    Glaser, Caleb
    Crawford, Mary H.
    Armstrong, Andrew
    Sharps, Paul
    Kaplar, Robert J.
    2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2021, : 288 - 292
  • [8] Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted Sidewall
    Liu, Xinke
    Li, Bo
    Wu, Junye
    Li, Jian
    Yue, Wen
    Zhu, Renqiang
    Wang, Qi
    Li, Xiaohua
    Ben, Jianwei
    He, Wei
    Chiu, Hsien-Chin
    Xu, Ke
    Zhong, Ze
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2024, 12 (34-38) : 34 - 38
  • [9] Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process
    Liao, Yaqiang
    Chen, Tao
    Wang, Jia
    Cai, Wentao
    Ando, Yuto
    Yang, Xu
    Watanabe, Hirotaka
    Tanaka, Atsushi
    Nitta, Shugo
    Honda, Yoshio
    Chen, Kevin J.
    Amano, Hiroshi
    APPLIED PHYSICS LETTERS, 2022, 120 (12)
  • [10] GaN Nanowire Schottky Barrier Diodes
    Sabui, Gourab
    Zubialevich, Vitaly Z.
    White, Mary
    Pampili, Pietro
    Parbrook, Peter J.
    McLaren, Mathew
    Arredondo-Arechavala, Miryam
    Shen, Z. John
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (05) : 2283 - 2290
12345