Low-cost area-efficient low-dropout regulators using MOSFET capacitors

被引：4

作者：

Aminzadeh, Hamed ^{[1
]}

Lotfi, Reza ^{[1
]}

Mafinezhad, Khalil ^{[1
]}

机构：

[1] Ferdowsi Univ Mashhad, Dept Elect Engn, Mashhad, Iran

来源：

IEICE ELECTRONICS EXPRESS | 2008年 / 5卷 / 16期

关键词：

area efficiency; depletion-mode MOS capacitors; ESR; frequency compensation; LDO; linear regulators; low-cost;

D O I：

10.1587/elex.5.610

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Traditional design of low-dropout regulators offers the use of metal-insulator-metal (MIM) compensation capacitors to avoid instability in the absence of output capacitance with equivalent series resistance (ESR). In addition to area efficiency achieved by replacing these capacitors with MOS transistors, the location of implanted transfer function poles and zeros are adaptively varied according to the value of load current. This idea has been applied to stabilize a 1.2V, 100mA low-dropout regulator in an industrial 0.18 mu m CMOS n-well process. Using the proposed technique, the regulator meets stability with a small 100 pF MOSFET output capacitor and no ESR.

引用

页码：610 / 616

页数：7

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