Basics of floating-gate low-dropout voltage regulators

被引：0

作者：

Low, A ^{[1
]}

Hasler, P ^{[1
]}

机构：

[1] Georgia Inst Technol, Atlanta, GA 30332 USA

来源：

PROCEEDINGS OF THE 43RD IEEE MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS I-III | 2000年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an overview of series voltage regulators, beginning with single-transistor designs and exploring the various design issues and concepts. The regulating characteristics of nFET and pFET single-transistor regulators are compared analytically and experimentally to determine an optimal starting topology. The design of these simple regulators is taken a step further by applying floating-gate techniques to improve the flexibility of the existing design and the ability to customize the regulator bias points.

引用

页码：1048 / 1051

页数：4

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