Fabrication of boron nitride planar field emitters

被引：6
|
作者：
Yokota, Y [1 ]
Tagawa, S [1 ]
Sugino, T [1 ]
机构：
[1] Osaka Univ, Dept Elect Engn, Fac Engn, Suita, Osaka 5650871, Japan
来源：
APPLIED SURFACE SCIENCE | 1999年 / 146卷 / 1-4期
关键词：
boron nitride; field emission; plasma-assisted chemical vapor deposition; planar field emitter;
D O I：
10.1016/S0169-4332(99)00037-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Boron nitride (BN) films are grown on sapphire substrates by plasma-assisted chemical vapor deposition (PACVD). BN films are doped with sulfur. Insertion of the GaN layer between the BN film and sapphire leads to a tight adhesion of the BN film. The electrical resistivity of the sulfur-doped BN film is reduced to 10(3) Omega cm. The cathode electrode is formed on the BN film and the anode electrode on the sapphire substrate by evaporating Ti and Au. An emission current of 1 mu A is obtained at an electric field strength of 16 V/mu m. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：193 / 197
页数：5
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