Effects of the matrix on self-organization of InAs quantum nanostructures grown on InP substrates

被引：49
|
作者：
Li, NX
Daniels-Race, T
Hasan, MA
机构：
[1] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA
[2] Univ N Carolina, Dept Elect & Comp Engn, Charlotte, NC 28223 USA
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 08期
关键词：
D O I：
10.1063/1.1452784
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the influence of matrix materials on the self-organization of InAs nanostructures gown on InP substrates by molecular-beam epitaxy. Our results show that InAs quantum dots are formed on InAlGaAs, whereas quantum-wire-like structures are produced on InAlAs and InGaAs, Tuning from vertical anticorrelation in InAs/InAlAs superlattices to vertical correlation in InAs/InGaAs and InAs/InAlGaAs superlattices is observed, which is explained by the size effects in the nanostructure-nanostructure interaction. (C) 2002 American Institute of Physics.
引用
收藏
页码：1367 / 1369
页数：3
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