Surface acoustic wave comparison of single and double layer AlGaAs/GaAs 2D hole systems

被引：0

作者：

Dunford, RB ^{[1
]}

Gates, MR ^{[1
]}

Mellor, CJ ^{[1
]}

Rampton, VW ^{[1
]}

Chauhan, JS ^{[1
]}

Middleton, JR ^{[1
]}

Henini, M ^{[1
]}

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

来源：

PHYSICA B-CONDENSED MATTER | 2002年 / 316卷

关键词：

surface acoustic wave; acoustoelectric effect; double layer hole systems; quantum Hall effect;

D O I：

10.1016/S0921-4526(02)00463-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

For a double layer 2D hole system, a maximum in velocity shift at upsilon = 1 was only observed at frequencies above 560 MHz. The background velocity shift in the region where the Fermi level lies in the extended states region was observed to increase with increasing frequency. Anomalous bipolar peaks centred at 1, 2 and 4 have been observed for high temperatures and powers in the longitudinal acoustoelectric effect at 0.8 GHz. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：219 / 222

页数：4

共 50 条

[1] Surface acoustic wave study of a double layer AlGaAs/GaAs 2D hole system
Gates, MR
Dunford, RB
Mellor, CJ
Rampton, VW
Chauhan, JS
Middleton, JR
Henini, M
PHYSICA B, 2001, 298 (1-4): : 70 - 73
[2] The acoustoelectric effect in double layer AlGaAs/GaAs 2D hole systems
Dunford, RB
Gates, MR
Mellor, CJ
Rampton, VW
Chauhan, JS
Middleton, JR
Henini, M
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 12 (1-4): : 462 - 465
[3] Frictional drag between coupled 2D hole gases in GaAs/AlGaAs heterostructures
Jörger, C
Cheng, SJ
Dietsche, W
Gerhardts, R
Specht, P
Eberl, K
von Klitzing, K
PHYSICA E, 2000, 6 (1-4): : 598 - 601
[4] Metallic behaviour and localisation in 2D GaAs hole systems
Simmons, MY
Hamilton, AR
Pepper, M
Linfield, EH
Rose, PD
Ritchie, DA
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2001, 11 (2-3): : 161 - 166
[5] Fabrication of independently contacted and tuneable 2D-electron-hole systems in GaAs/AlGaAs double quantum wells
Rubel, H
Fischer, A
Dietsche, W
Von Klitzing, K
Eberl, K
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 51 (1-3): : 207 - 211
[6] GaAs/AlGaAs light emitting diode with 2D photonic structure in the surface
Suslik, L.
Pudis, D.
Skriniarova, J.
Kovac, J.
Kubicova, I.
Tvarozek, P.
Martincek, I.
Novak, J.
METAMATERIALS VI, 2011, 8070
[7] A New 2D Double-layer Network Constructed from a 2D Single Layer
徐慧玲
尹祖允
邱海江
邓兴发
仝锦涛
肖冬荣
结构化学, 2017, 36 (01) : 99 - 106
[8] A New 2D Double-layer Network Constructed from a 2D Single Layer
Xu Hui-Ling
Yin Zu-Yun
Qiu Hai-Jiang
Deng Xing-Fa
Tong Jin-Tao
Xiao Dong-Rong
CHINESE JOURNAL OF STRUCTURAL CHEMISTRY, 2017, 36 (01) : 99 - 106
[9] 2D magnetofermionic condensate in GaAs/AlGaAs heterostructures
Kulik, L. V.
Gorbunov, A. V.
Zhuravlev, A. S.
Timofeev, V. B.
Kukushkin, I. V.
LOW TEMPERATURE PHYSICS, 2017, 43 (08) : 936 - 941
[10] CHARACTERIZATION OF THE SURFACE ACOUSTIC-WAVE INDUCED POTENTIAL IN A GAAS/ALGAAS HETEROSTRUCTURE
CAMPBELL, JWM
GUILLON, F
DIORIO, M
BUCHANAN, M
STONER, RJ
SOLID STATE COMMUNICATIONS, 1992, 84 (07) : 735 - 738

← 1 2 3 4 5 →