GaAs/AlGaAs light emitting diode with 2D photonic structure in the surface

被引：0
|
作者：
Suslik, L. [1 ]
Pudis, D. [1 ]
Skriniarova, J. [2 ]
Kovac, J. [2 ]
Kubicova, I. [1 ]
Tvarozek, P. [1 ]
Martincek, I. [1 ]
Novak, J. [3 ]
机构：
[1] Univ Zilina, Dept Phys, Fac Elect Engn, Univerzitna 1, Zilina 01026, Slovakia
[2] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat, Dept Microelect, Bratislava 81219, Slovakia
[3] Slovak Acad Sci, Inst Elect Engn, Bratislava 84104, Slovakia
来源：
METAMATERIALS VI | 2011年 / 8070卷
关键词：
photonic crystal structure; interference lithography; optoelectronic device; semiconductor material; light emitting diode; PERIODIC STRUCTURES; EXTRACTION; FABRICATION; CRYSTALS; EXPOSURE; ENHANCEMENT;
D O I：
10.1117/12.887002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, effect of two-dimensional photonic pattern on the properties of the GaAs/AlGaAs based light emitting diode (LED) is demonstrated. The interference lithography was employed to surface patterning of the GaAs/AlGaAs based LED. The active region of the LED includes a GaAs/AlGaAs triple quantum well emitting at 850 nm. Interference lithography was used for preparation of two-dimensional pattern in the upper diode layer. The prepared LED with two-dimensional patterned photonic crystal structure was then investigated by electrical and optical measurements. Prepared photonic crystal LED shows enhanced light extraction efficiency due to the more effective extraction of guiding modes, what was documented from finite difference time domain simulations as well as from L(I) measurements.
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页数：7
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