The reaction mechanism of poly [4-hydroxystyrene-co-4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropyl)-styrene]

被引：0
|
作者：
Yamamoto, Hiroki [1 ]
Kozawa, Takahiro [1 ]
Okamoto, Kazumasa [1 ]
Tagawa, Seiichi [1 ]
Ando, Tomoyuki [2 ]
Sato, Mitsuru [2 ]
Komano, Hiroji [2 ]
机构：
[1] Osaka Univ, Inst Sci & Ind Res, 8-1 Mihogaoka, Osaka 5670047, Japan
[2] Tokyo Ohka Kogyo Co Ltd, Koza, Kanagawa 2530114, Japan
来源：
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXIII, PTS 1 AND 2 | 2006年 / 6153卷
关键词：
chemically amplified resists; acid generation; electron beam; halogenation; Coumarin6;
D O I：
10.1117/12.656262
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
It is a well-known strategy for the improvement of resist performance to halogenate resist materials especially in electron beam and X-ray resists. However, the halogenation of polymers requires special caution for chemically amplified resists, because it may interfere with acid generation. In this work, the acid generation in poly[4-hydroxystyrene-co-4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropyl)-styrene] films was investigated. Acid yields decrease as the ratio of hexafluoroalcohol units increases. This study showed that the reactivity of the polymers with low energy electrons (similar to 0eV) correlates to the decrease of acid yields.
引用
收藏
页码：U1390 / U1398
页数：9
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