The effect of post-growth interruption on the formation of InGaAs/GaAs quantum dots obtained by MOVPE

被引：0
|
作者：
Salii, R. A. [1 ]
Mintairov, S. A. [1 ]
Nadtochiy, A. M. [1 ]
Nevedomskiy, V. N. [1 ]
Kalyuzhnyy, N. A. [1 ]
机构：
[1] Ioffe Inst, Polytechnicheskaya Str 26, St Petersburg, Russia
来源：
INTERNATIONAL CONFERENCE PHYSICA.SPB/2019 | 2019年 / 1400卷
基金：
俄罗斯基础研究基金会;
关键词：
VAPOR-PHASE-EPITAXY; SOLAR-CELLS; EFFICIENCY;
D O I：
10.1088/1742-6596/1400/5/055015
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this work, the study of formation regimes of In0.8Ga0.2As quantum dots on GaAs surface by metallorganic vapour-phase epitaxy has been carried out. The influence of post-growth interruption after the quantum dots deposition on the optical and physical properties of the formed objects has been investigated. It has been established that the interruption time of 2-5 seconds is optimal for the In0.8Ga0.2As/GaAs material system and growth conditions. For the chosen interruption time, the quality of formed quantum dots and their physical sizes were estimated using transmission electron microscopy: lateral size is 10 - 20 nm, height is not exceeding 5 nm and concentration is similar to 9.8.10(10) cm(-2).
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页数：6
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