The effect of post-growth interruption on the formation of InGaAs/GaAs quantum dots obtained by MOVPE

被引：0
|
作者：
Salii, R. A. [1 ]
Mintairov, S. A. [1 ]
Nadtochiy, A. M. [1 ]
Nevedomskiy, V. N. [1 ]
Kalyuzhnyy, N. A. [1 ]
机构：
[1] Ioffe Inst, Polytechnicheskaya Str 26, St Petersburg, Russia
来源：
INTERNATIONAL CONFERENCE PHYSICA.SPB/2019 | 2019年 / 1400卷
基金：
俄罗斯基础研究基金会;
关键词：
VAPOR-PHASE-EPITAXY; SOLAR-CELLS; EFFICIENCY;
D O I：
10.1088/1742-6596/1400/5/055015
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this work, the study of formation regimes of In0.8Ga0.2As quantum dots on GaAs surface by metallorganic vapour-phase epitaxy has been carried out. The influence of post-growth interruption after the quantum dots deposition on the optical and physical properties of the formed objects has been investigated. It has been established that the interruption time of 2-5 seconds is optimal for the In0.8Ga0.2As/GaAs material system and growth conditions. For the chosen interruption time, the quality of formed quantum dots and their physical sizes were estimated using transmission electron microscopy: lateral size is 10 - 20 nm, height is not exceeding 5 nm and concentration is similar to 9.8.10(10) cm(-2).
引用
收藏
页数：6
相关论文
共 50 条
  • [21] Effect of the growth parameters on the electron structure of quantum dots in InGaAs/GaAs heterostructures
    Tonkikh, AA
    Egorov, VA
    Polyakov, NK
    Tsyrlin, GÉ
    Volovik, BV
    Cherkashin, NA
    Ustinov, VM
    TECHNICAL PHYSICS LETTERS, 2002, 28 (03) : 191 - 193
  • [22] Effect of the growth parameters on the electron structure of quantum dots in InGaAs/GaAs heterostructures
    A. A. Tonkikh
    V. A. Egorov
    N. K. Polyakov
    G. É. Tsyrlin
    B. V. Volovik
    N. A. Cherkashin
    V. M. Ustinov
    Technical Physics Letters, 2002, 28 : 191 - 193
  • [23] Effect of growth interruption time and growth temperature on the natural formation of InGaAs/AlGaAs quantum disk structures on GaAs (311)B substrates
    Ogawa, T
    Akabori, M
    Motohisa, J
    Fukui, T
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (02) : 745 - 749
  • [24] Effect of annealing on anticorrelated InGaAs/GaAs quantum dots
    Gutierrez, M.
    Hopkinson, M.
    Tartakovskii, A. I.
    Skolnick, M. S.
    Herrera, M.
    D Gonzalez
    Garcia, R.
    Microscopy of Semiconducting Materials, 2005, 107 : 255 - 258
  • [25] Critical barrier thickness for the formation of InGaAs/GaAs quantum dots
    Gutiérrez, M
    Hopkinson, M
    Liu, HY
    Tartakovskii, AI
    Herrera, M
    González, D
    García, R
    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2005, 25 (5-8): : 798 - 803
  • [26] Effects of post-growth annealing on the optical properties of self-assembled GaAs/AlGaAs quantum dots
    Sanguinetti, S
    Watanabe, K
    Kuroda, T
    Minami, F
    Gotoh, Y
    Koguchi, N
    JOURNAL OF CRYSTAL GROWTH, 2002, 242 (3-4) : 321 - 331
  • [27] Atmospheric pressure-MOVPE growth of GaSb/GaAs quantum dots
    Tile, Ngcali
    Ahia, Chinedu C.
    Olivier, Jaco
    Botha, Johannes Reinhardt
    PHYSICA B-CONDENSED MATTER, 2018, 535 : 20 - 23
  • [28] EFFECT OF POST-GROWTH ANNEALING ON PATTERNED GAAS ON SILICON
    MATYI, RJ
    DUNCAN, WM
    SHICHIJO, H
    TSAI, HL
    APPLIED PHYSICS LETTERS, 1988, 53 (26) : 2611 - 2613
  • [29] HIGHLY UNIFORM INGAAS QUANTUM DOTS (APPROXIMATE-TO-15-NM) GROWN BY MOVPE ON GAAS
    OSHINOWO, J
    NISHIOKA, M
    ISHIDA, S
    ARAKAWA, Y
    JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 986 - 987
  • [30] Growth of InGaAs/GaAs on offcut substrates by MOVPE: Influence on macrosteps and dislocations formation
    CNR-MASPEC Inst, Parma, Italy
    Cryst Res Technol, 3 (375-382):
12345