Study of small-cell 3D silicon pixel detectors for the high luminosity LHC

被引:3
|
作者
Curras, E. [1 ]
Duarte-Campderros, J. [1 ]
Fernandez, M. [1 ]
Garcia, A. [1 ]
Gomez, G. [1 ]
Gonzalez, J. [1 ]
Jaramillo, R. [1 ]
Moya, D. [1 ]
Vila, I [1 ]
Hidalgo, S. [2 ]
Manna, M. [2 ]
Pellegrini, G. [2 ]
Quirion, D. [2 ]
Pitzl, D. [3 ]
Ebrahimi, A. [4 ]
Rohe, T. [5 ]
Wiederkehr, S. [5 ]
机构
[1] Univ Cantabria, CSIC, Inst Fisca Cantabria, Santander, Spain
[2] Ctr Nacl Microelectron, Inst Microelectron Barcelona, Cerdanyola Del Valles, Spain
[3] Deutsch Elektronen Synchrotron DESY, Hamburg, Germany
[4] Univ Hamburg, Hamburg, Germany
[5] Paul Scherrer Inst, Villigen, Switzerland
关键词
Silicon radiation detector; Small pitch pixel sensors;
D O I
10.1016/j.nima.2019.04.037
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A study of 3D pixel sensors of cell size 50 mu m x 50 mu m fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch hybrid assembly, the sensor response to ionizing radiation in a test beam of 5.6 GeV electrons was studied. Results for non-irradiated sensors are presented, including efficiency, charge sharing, signal-to-noise, and resolution for different incidence angles.
引用
收藏
页码:127 / 134
页数:8
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