Study of small-cell 3D silicon pixel detectors for the high luminosity LHC

被引：3

作者：

Curras, E. ^{[1
]}

Duarte-Campderros, J. ^{[1
]}

Fernandez, M. ^{[1
]}

Garcia, A. ^{[1
]}

Gomez, G. ^{[1
]}

Gonzalez, J. ^{[1
]}

Jaramillo, R. ^{[1
]}

Moya, D. ^{[1
]}

Vila, I ^{[1
]}

Hidalgo, S. ^{[2
]}

Manna, M. ^{[2
]}

Pellegrini, G. ^{[2
]}

Quirion, D. ^{[2
]}

Pitzl, D. ^{[3
]}

Ebrahimi, A. ^{[4
]}

Rohe, T. ^{[5
]}

Wiederkehr, S. ^{[5
]}

机构：

[1] Univ Cantabria, CSIC, Inst Fisca Cantabria, Santander, Spain

[2] Ctr Nacl Microelectron, Inst Microelectron Barcelona, Cerdanyola Del Valles, Spain

[3] Deutsch Elektronen Synchrotron DESY, Hamburg, Germany

[4] Univ Hamburg, Hamburg, Germany

[5] Paul Scherrer Inst, Villigen, Switzerland

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2019年 / 931卷

关键词：

Silicon radiation detector; Small pitch pixel sensors;

D O I：

10.1016/j.nima.2019.04.037

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A study of 3D pixel sensors of cell size 50 mu m x 50 mu m fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch hybrid assembly, the sensor response to ionizing radiation in a test beam of 5.6 GeV electrons was studied. Results for non-irradiated sensors are presented, including efficiency, charge sharing, signal-to-noise, and resolution for different incidence angles.

引用

页码：127 / 134

页数：8

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