Modelling of chirality-dependent current-voltage characteristics of carbon-nanotube field-effect transistors

被引:5
|
作者
Zhao Xu [1 ]
Wang Yan [1 ]
Yu Zhi-Ping [1 ]
机构
[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China
关键词
8;
D O I
10.1088/0256-307X/23/5/073
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Current-voltage characteristics of ballistic carbon-nanotube field-effect transistors are characterized with an iterative simulation program. The influence of carbon-nanotube chirality and diameter on the output current is considered. An analytical current-voltage expression under the quantum capacitance limit and low-voltage application is derived. Our simulation results are compared with actual measurement data.
引用
收藏
页码:1327 / 1330
页数:4
相关论文
共 50 条
  • [1] CURRENT-VOLTAGE CHARACTERISTICS OF FIELD-EFFECT TRANSISTORS WITH SHORT CHANNELS
    HESS, K
    DORDA, G
    SAH, CT
    SOLID STATE COMMUNICATIONS, 1976, 19 (05) : 471 - 473
  • [2] Effects of fabrication process on current-voltage characteristics of carbon nanotube field effect transistors
    Mizutani, T
    Iwatsuki, S
    Ohno, Y
    Kishimoto, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4A): : 1599 - 1602
  • [3] Lateral scaling in carbon-nanotube field-effect transistors
    Wind, SJ
    Appenzeller, J
    Avouris, P
    PHYSICAL REVIEW LETTERS, 2003, 91 (05)
  • [4] Temperature dependence of the current-voltage characteristics of a carbon-nanotube heterojunction
    Kim, J
    Lee, JO
    Oh, H
    Yoo, KH
    Kim, JJ
    PHYSICAL REVIEW B, 2001, 64 (16):
  • [5] A COMPACT CURRENT-VOLTAGE MODEL FOR CARBON NANOTUBE FIELD EFFECT TRANSISTORS
    Hosseinzadegan, Hadi
    Aghababa, Hossein
    Zangeneh, Mahmoud
    Afzali-Kusha, Ali
    Forouzandeh, Behjat
    CAS: 2008 INTERNATIONAL SEMICONDUCTOR CONFERENCE, PROCEEDINGS, 2008, : 359 - 362
  • [6] THE CURRENT-VOLTAGE CHARACTERISTICS OF SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS
    BALDIN, VA
    LAZUNIN, YA
    TELECOMMUNICATIONS AND RADIO ENGINEERING, 1991, 46 (09) : 71 - 73
  • [7] Extracting parameters from the current-voltage characteristics of field-effect transistors
    Horowitz, G
    Lang, P
    Mottaghi, M
    Aubin, H
    ADVANCED FUNCTIONAL MATERIALS, 2004, 14 (11) : 1069 - 1074
  • [8] Current-voltage characteristics of Schottky-gate field-effect transistors
    Baldin, V.A.
    Lazunin, Yu.A.
    Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika), 1991, 46 (09): : 71 - 73
  • [9] CURRENT-VOLTAGE CHARACTERISTICS OF MOS FIELD-EFFECT TRANSISTORS IN LINEAR AND SATURATION REGION
    SCHWAB, H
    ELECTRONICS LETTERS, 1974, 10 (17) : 356 - 358
  • [10] Effects of Water and Different Solutes on Carbon-Nanotube Low-Voltage Field-Effect Transistors
    Foudeh, Amir M.
    Pfattner, Raphael
    Lu, Shiheng
    Kubzdela, Nicola S.
    Gao, Theodore Z.
    Lei, Ting
    Bao, Zhenan
    SMALL, 2020, 16 (34)