Experimental and numerical study of the recovery softness and overvoltage dependence on p-i-n diode design

被引：9
|
作者：
Cova, P
Menozzi, R
Portesine, M
机构：
[1] Univ Parma, Dipartimento Ingn Informaz, I-43100 Parma, Italy
[2] POSEICO SpA, I-16152 Genoa, Italy
来源：
MICROELECTRONICS JOURNAL | 2006年 / 37卷 / 05期
关键词：
power diodes; reverse recovery; electron irradiation;
D O I：
10.1016/j.mejo.2005.05.027
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work offers a reliability-oriented characterization of power p-i-n diodes turn-off transients. The softness of the turn-off and the snap-off voltage (defined as the threshold beyond which large, anomalous reverse overvoltages develop across the diode at turn-off) are investigated both experimentally and numerically for a wide set of diodes with different drift region width, resistivity and lifetime. In particular, lifetime control is obtained by electron irradiation at different doses. As a result, guidelines emerge for the design of the snubberless diode with optimum trade-off between switching speed and softness. It is also suggested that, for complete diode characterization, the well-known softness factor be accompanied by the snap-off voltage, i.e. the peak reverse voltage triggering anomalous oscillations in the turn-off transient. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：409 / 416
页数：8
相关论文
共 50 条
  • [21] INTERMODULATION PRODUCTS GENERATED BY A P-I-N DIODE SWITCH
    SICOTTE, RL
    ASSALY, RN
    [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (01): : 74 - &
  • [22] Power P-I-N diode modeling using SPICE
    Araujo, A
    Carvalho, A
    de Carvalho, JLM
    [J]. ISIE '97 - PROCEEDINGS OF THE IEEE INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS, VOLS 1-3, 1997, : 211 - 216
  • [23] Temperature and band gap dependence of GaAsBi p-i-n diode current-voltage behaviour
    Richards, R. D.
    Harun, F.
    Nawawi, M. R. M.
    Liu, Y.
    Rockett, T. B. O.
    David, J. P. R.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 54 (19)
  • [24] STUDY OF PRINCIPLE OF OPERATION OF P-I-N DIODE WITH APPLICATION OF THE FUNDAMENTALS OF WAVELET ANALYSIS
    Zaharov, A. A.
    Tkachenko, I. M.
    Kozhanova, E. R.
    Miroshnichenko, A. Yu.
    [J]. 2016 INTERNATIONAL CONFERENCE ON ACTUAL PROBLEMS OF ELECTRON DEVICES ENGINEERING (APEDE), VOL 2, 2016, : 493 - 496
  • [25] Design and technology of monolithic GaAs p-i-n diode limiters for the millimeter wavelength range
    Volkov, VV
    Ivanova, VP
    Kuz'michev, YS
    Solov'ev, YV
    [J]. TECHNICAL PHYSICS LETTERS, 2005, 31 (07) : 611 - 612
  • [26] Photorefractive quantum well p-i-n diode:: Design for high resolution and broad bandwidth
    Iwamoto, S
    Nishioka, M
    Someya, T
    Arakawa, Y
    Shimura, T
    Kuroda, K
    [J]. PHOTOREFRACTIVE EFFECTS, MATERIALS AND DEVICES, PROCEEDINGS, 2001, 62 : 403 - 409
  • [27] Design and technology of monolithic GaAs p-i-n diode limiters for the millimeter wavelength range
    V. V. Volkov
    V. P. Ivanova
    Yu. S. Kuz’michev
    Yu. V. Solov’ev
    [J]. Technical Physics Letters, 2005, 31 : 611 - 612
  • [28] Lead Halide Perovskite Photovoltaic as a Model p-i-n Diode
    Miyano, Kenjiro
    Tripathi, Neeti
    Yanagida, Masatoshi
    Shirai, Yasuhiro
    [J]. ACCOUNTS OF CHEMICAL RESEARCH, 2016, 49 (02) : 303 - 310
  • [29] THEORY OF SMALL-SIGNAL IMPEDANCE OF A P-I-N DIODE
    SELISHCH.GV
    [J]. RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1970, 15 (07): : 1341 - &
  • [30] P-I-N DIODE MODULATORS FOR K AND Q FREQUENCY BANDS
    HINTON, LJT
    BURRY, LF
    [J]. RADIO AND ELECTRONIC ENGINEER, 1966, 31 (01): : 22 - &
12345