Photorefractive quantum well p-i-n diode:: Design for high resolution and broad bandwidth

被引：0
|
作者：
Iwamoto, S [1 ]
Nishioka, M [1 ]
Someya, T [1 ]
Arakawa, Y [1 ]
Shimura, T [1 ]
Kuroda, K [1 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
来源：
PHOTOREFRACTIVE EFFECTS, MATERIALS AND DEVICES, PROCEEDINGS | 2001年 / 62卷
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Design of quantum-well structure and cladding layers is a key issue to improve the performance of photorefractive semiconductor multiple quantum well (MQW) p-i-n diodes operated in the longitudinal-field geometry. We investigated device structures for (i) improving spatial resolution and (ii) expanding spectral bandwidth. Reduction of potential difference between the MQW region and the cladding layer has significantly improved the spatial resolution in InGaAs/GaAs p-i-n diode. We also propose a new approach to expand the diffraction bandwidth by employing asymmetric coupled quantum well (ACQW) structures. Diffraction has been observed at a spectral range over 30 nm in AlGaAs/GaAs ACQW p-i-n diode. Photorefractive ACQW devices will be suitable for applications such as optical short-pulse processing.
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页码：403 / 409
页数：7
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