Experimental and numerical study of the recovery softness and overvoltage dependence on p-i-n diode design

被引:9
|
作者
Cova, P
Menozzi, R
Portesine, M
机构
[1] Univ Parma, Dipartimento Ingn Informaz, I-43100 Parma, Italy
[2] POSEICO SpA, I-16152 Genoa, Italy
关键词
power diodes; reverse recovery; electron irradiation;
D O I
10.1016/j.mejo.2005.05.027
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work offers a reliability-oriented characterization of power p-i-n diodes turn-off transients. The softness of the turn-off and the snap-off voltage (defined as the threshold beyond which large, anomalous reverse overvoltages develop across the diode at turn-off) are investigated both experimentally and numerically for a wide set of diodes with different drift region width, resistivity and lifetime. In particular, lifetime control is obtained by electron irradiation at different doses. As a result, guidelines emerge for the design of the snubberless diode with optimum trade-off between switching speed and softness. It is also suggested that, for complete diode characterization, the well-known softness factor be accompanied by the snap-off voltage, i.e. the peak reverse voltage triggering anomalous oscillations in the turn-off transient. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:409 / 416
页数:8
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