TRAPATT OSCILLATIONS IN A P-I-N AVALANCHE DIODE

被引：9

|

作者：

PARKER, D

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1971年 / ED18卷 / 05期

关键词：

D O I：

10.1109/T-ED.1971.17189

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：281 / +

页数：1

相关论文

共 50 条

[1] Pseudo p-i-n Avalanche Diode Clamp
Vashchenko, V. A.
Shibkov, A. A.
2014 36TH ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM (EOS/ESD), 2014,
[2] FREQUENCY MULTIPLICATION BY A P-I-N DIODE WHEN DRIVEN INTO AVALANCHE BREAKDOWN
NTAKE, PL
CONN, DR
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1975, MT23 (06) : 477 - 485
[3] P-I-N DIODE DRIVERS
不详
ELECTRONIC ENGINEERING, 1972, 44 (536): : 18 - &
[4] CHARACTERIZATION OF AVALANCHE DIODE TRAPATT OSCILLATORS
EVANS, WJ
SCHARFET.DL
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (05) : 397 - &
[5] Spatial oscillations of the electric field and the charge density in a silicon p-i-n diode
D. A. Usanov
S. S. Gorbatov
V. Yu. Kvasko
A. V. Fadeev
A. A. Kalyamin
Technical Physics Letters, 2014, 40 : 984 - 986
[6] Spatial oscillations of the electric field and the charge density in a silicon p-i-n diode
Usanov, D. A.
Gorbatov, S. S.
Kvasko, V. Yu
Fadeev, A. V.
Kalyamin, A. A.
TECHNICAL PHYSICS LETTERS, 2014, 40 (11) : 984 - 986
[7] Avalanche breakdown field in p-i-n structures
Kholodnov, VA
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 1998, 43 (10) : 1166 - 1169
[8] INSTABILITY IN AVALANCHE REGION OF SI P-I-N DIODES
OKUTO, Y
KONDO, M
NAGASHIM.I
UCHIDA, I
JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (05) : 533 - &
[9] A P-I-N THERMO-PHOTOVOLTAIC DIODE
KIM, CW
SCHWARTZ, RJ
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (07) : 657 - &
[10] Electrostatics of the nanowire radial p-i-n diode
Borblik, V. L.
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2019, 22 (02) : 201 - 205

← 1 2 3 4 5 →