Effects of Work-function Variation on Analog Figures-of-merits of Inversion-mode and Junctionless Nanowire Transistors

被引：0
|
作者：
Kim, Jiwon [1 ]
Oh, Hyeongwan [1 ]
Kim, Jungsik [2 ]
Lee, Jeong-Soo [1 ]
机构：
[1] POSTECH, Dept Elect Engn, Pohang, South Korea
[2] POSTECH, Div IT Convergence Engn, Pohang, South Korea
来源：
2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | 2016年
基金：
新加坡国家研究基金会;
关键词：
CMOS TECHNOLOGY; RANDOM DOPANT; DENSITY; FINFETS; DEVICE; DESIGN;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We investigate the analog figures-of-merits (FOMs) of inversion-mode and junctionless nanowire transistors regarding to the gate metal work-function variation using 3D TCAD simulations. The junctionless device shows more immunity to work-function variation on analog FOMs compared to the inversion-mode counterpart. The correlation between parameters affects the immunity of variation on analog FOMs. Compared to the inversion-mode devices, the overall variation in JL devices are less with weak correlation between transconductance and the gate capacitance resulting in similar cut-off frequency characteristics.
引用
收藏
页码：944 / 946
页数：3
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