Junctionless Versus Inversion-Mode Gate-All-Around Nanowire Transistors From a Low-Frequency Noise Perspective

被引：23
|
作者：
Simoen, Eddy [1 ]
Veloso, Anabela [2 ]
Matagne, Philippe [2 ]
Collaert, Nadine [2 ]
Claeys, Cor [3 ]
机构：
[1] IMEC, Epi Grp, B-3001 Leuven, Belgium
[2] IMEC, B-3001 Leuven, Belgium
[3] Katholieke Univ Leuven, Elect Engn Dept, B-3001 Leuven, Belgium
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 04期
关键词：
Inversion-mode (IM) transistor; juntionless (JL) transistor; low-frequency (LF) noise; oxide trap density; 1/F NOISE; P-MOSFETS; IMPACT; BEHAVIOR; PERFORMANCE; FINFETS; METAL;
D O I：
10.1109/TED.2018.2799617
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The low-frequency noise behavior of junction-less (JL) gate-all-around (GAA) nanowire (NW) FETs has been investigated and compared with similar inversion-mode (IM) devices. It is shown that the predominant 1/f-like noise is governed by carrier number fluctuation (CNF) around threshold voltage operation, while for the p-channel transistors, a pronounced increase in the noise power spectral density is observed at higher gate voltage overdrives. This is due to the impact of the access region to the flicker noise. While the CNF noise is roughly one decade higher for the n-channel than for the p-channel transistors, the opposite holds for the access-related component for both IM and JL GAA NWFETs. It is, finally, observed that the CNF noise is on the average slightly lower in the JL devices compared with their IM counterparts; the origin of this trend will be discussed.
引用
收藏
页码：1487 / 1492
页数：6
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