Impact of work-function variation on analog figures-of-merits for high-k/ metal-gate junctionless FinFET and gate-all-around nanowire MOSFET

被引：16

作者：

Lu, Wei-Feng ^{[1
]}

Dai, Liang ^{[1
]}

机构：

[1] Hangzhou Dianzi Univ, Key Lab RF Circuits & Syst, Minist Educ, Hangzhou 310018, Zhejiang, Peoples R China

来源：

MICROELECTRONICS JOURNAL | 2019年 / 84卷

基金：

中国国家自然科学基金;

关键词：

Metal-gate granularity; Junctionless (JL) FinFET; Gate-all-around (GAA); Work-function variation (WFV); Ratio of average grain size to gate area (RGG); RANDOM DOPANT; VARIABILITY;

D O I：

10.1016/j.mejo.2018.12.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, the impact of orientation of metal-gate granularity on analog figures-of-merit (FOMs) in high-k/ metal-gate junctionless (JL) fin-field-effect transistor (FinFET) and gate-all-around (GAA) nanowire metaloxide-semiconductor-field-effect-transistor (NWFET), with a similar ratio of average grain size to gate area is investigated. Further, their FOMs when operating in the linear and saturated regions have been compared using three-dimensional technology computer-aided design simulation. According to the standard deviation and relative deviation of the FOMs, it is observed that their FOMs are significantly affected by the work-function variation (WFV). In addition, as expected, the influence of WFV on the JL FinFET is greater than that on the GAA NWFET. Our study provides insights for circuit design using high-k/metal-gate technology.

引用

页码：54 / 58

页数：5

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