The mechanical properties and thermal stability of a nanostructured carbide. dispersion strengthened W-0.5 wt.% Ta-0.01 wt.% C alloy

被引:19
|
作者
Miao, S. [1 ,2 ]
Xie, Z. M. [1 ,2 ]
Zeng, L. F. [1 ,2 ]
Zhang, T. [1 ]
Fang, Q. F. [1 ]
Wang, X. P. [1 ]
Liu, C. S. [1 ]
Luo, G. N. [3 ]
Liu, X. [4 ]
机构
[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
[2] Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R China
[3] Chinese Acad Sci, Inst Plasma Phys, Hefei 230031, Anhui, Peoples R China
[4] Southwestern Inst Phys, Chengdu 610041, Sichuan, Peoples R China
基金
中国国家自然科学基金;
关键词
W-TaC alloys; Mechanical alloying; Mechanical properties; Thermal stability; PLASMA-FACING MATERIALS; TUNGSTEN ALLOYS; BEHAVIOR; MICROSTRUCTURE; TEMPERATURE; COMPONENTS; DEMO;
D O I
10.1016/j.fusengdes.2017.04.015
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
In this paper, W-0.5 wt.% Ta-0.01 wt.% C (W-05Ta-001C) alloys were fabricated via a combination of high energy ball milling and subsequent spark plasma sintering. The W-05Ta-001C alloys showed high strength of 565 MPa at 400 degrees C with a total elongation of 54%. The improved ductility resulted from nano sized TaC precipitation. The microstructure analysis of W-05Ta-001C alloys indicate that the nanosized TaC precipitation uniformly distributed in the grain interior encouraging trapping dislocations. TaC could reduce free oxygen concentration and thus enhance grain boundaries strength by reacting with impurities of oxygen to form compounds of Ta-C-x-O-y at grain boundaries. The thermal stability of W-05Ta-001C alloys was investigated by analyzing the evolution of hardness based on isochronal annealing tests. The results showed that hardness only slightly decreased with increasing annealing temperature up to 1500 degrees C, and the recrystallization temperature was about 1600 degrees C. This good thermal stability is attributed to nanosized TaC dispersion strengthened structures. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:490 / 495
页数:6
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