Thermally Stimulated Luminescence in Ce-Doped Yttrium Oxyorthosilicate

被引：14
|
作者：
Mihokova, E. [1 ]
Vavru, K. [2 ]
Horodysky, P. [3 ]
Chewpraditkul, W. [4 ]
Jary, V. [1 ]
Nikl, M. [1 ]
机构：
[1] ASCR, Inst Phys, Prague 16253, Czech Republic
[2] Czech Tech Univ, Fac Nucl Sci & Phys Engn, CR-11519 Prague, Czech Republic
[3] Crytur Ltd, Turnov 51101, Czech Republic
[4] KMUTT, Dept Phys, Bangkok 10140, Thailand
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2012年 / 59卷 / 05期
关键词：
Oxide compounds; scintillation detectors; thermoluminescence; RARE-EARTH; THERMOLUMINESCENCE;
D O I：
10.1109/TNS.2012.2190521
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We analyze thermally stimulated luminescence (TSL) above room temperature in Ce-doped Y2SiO5 oxyorthosilicate single crystal. We perform detailed TSL glow peak analysis based on the initial rise technique to evaluate trap depths and other characteristics associated with TSL peaks. The tunneling process previously proposed to be at work in recombination mechanism of Ce-doped lutetium oxyothosilicate was not confirmed in presently studied isostructural yttrium silicate. The charge carrier transfer between traps and Ce recombination centers is rather accomplished via conduction band.
引用
收藏
页码：2085 / 2088
页数：4
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