Surface-Potential-Based Drain Current Model for Long-Channel Junctionless Double-Gate MOSFETs

被引：74

作者：

Chen, Zhuojun ^{[1
]}

Xiao, Yongguang

Tang, Minghua ^{[1
]}

Xiong, Ying

Huang, Jianqiang

Li, Jiancheng ^{[2
]}

Gu, Xiaochen ^{[2
]}

Zhou, Yichun

机构：

[1] Xiangtan Univ, Minist Educ, Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Peoples R China

[2] Natl Univ Def Technol, Coll Elect Sci & Engn, ASIC R&D Ctr, Changsha 410073, Hunan, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 12期

基金：

中国国家自然科学基金;

关键词：

Double gate (DG); junctionless (JL) MOSFET; surface potential; threshold voltage shift; TRANSISTORS;

D O I：

10.1109/TED.2012.2221164

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A surface-potential-based model is developed for the symmetric long-channel junctionless double-gate MOSFET. The relationships between surface potential and gate voltage are derived from some effective approximations to Poisson's equation for deep depletion, partial depletion, and accumulation conditions. Then, the Pao-Sah integral is carried out to obtain the drain current. It is shown that the model is in good agreement with numerical simulations from subthreshold to saturation region. Finally, we discuss the strengths and limitations (i.e., threshold voltage shifts) of the JLFET, which has been recently proposed as a promising candidate for the JFET.

引用

页码：3292 / 3298

页数：7

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