Reliability of GaN HEMTs: Electrical and Radiation-Induced Failure Mechanisms

被引：5
|
作者：
Anderson, T. J. [1 ]
Koehler, A. D. [1 ]
Tadjer, M. J. [1 ]
Hobart, K. D. [1 ]
Specht, P. [2 ]
Porter, M. [3 ]
Weatherford, T. R. [3 ]
Weaver, B. [1 ]
Hite, J. K. [1 ]
Kub, F. J. [1 ]
机构：
[1] Naval Res Lab, Washington, DC 20375 USA
[2] Univ Calif Berkeley, Berkeley, CA 94720 USA
[3] US Navy, Postgrad Sch, Monterey, CA 93943 USA
来源：
GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 3 | 2013年 / 58卷 / 04期
关键词：
D O I：
10.1149/05804.0221ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The reliability of AlGaN/GaN HEMTs is currently a limiting factor in the development of next-generation power amplifier technology. In this work, we use atomic-resolution transmission electron microscopy (TEM) to directly image the defects associated with device failure. Furthermore, we attempt to induce defects through electrical and radiation-induced stress on the device, and compare the mechanism for failure by TEM analysis.
引用
收藏
页码：221 / 225
页数：5
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