Reliability of GaN HEMTs: Electrical and Radiation-Induced Failure Mechanisms

被引：5

作者：

Anderson, T. J. ^{[1
]}

Koehler, A. D. ^{[1
]}

Tadjer, M. J. ^{[1
]}

Hobart, K. D. ^{[1
]}

Specht, P. ^{[2
]}

Porter, M. ^{[3
]}

Weatherford, T. R. ^{[3
]}

Weaver, B. ^{[1
]}

Hite, J. K. ^{[1
]}

Kub, F. J. ^{[1
]}

机构：

[1] Naval Res Lab, Washington, DC 20375 USA

[2] Univ Calif Berkeley, Berkeley, CA 94720 USA

[3] US Navy, Postgrad Sch, Monterey, CA 93943 USA

来源：

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 3 | 2013年 / 58卷 / 04期

关键词：

D O I：

10.1149/05804.0221ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The reliability of AlGaN/GaN HEMTs is currently a limiting factor in the development of next-generation power amplifier technology. In this work, we use atomic-resolution transmission electron microscopy (TEM) to directly image the defects associated with device failure. Furthermore, we attempt to induce defects through electrical and radiation-induced stress on the device, and compare the mechanism for failure by TEM analysis.

引用

页码：221 / 225

页数：5

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