Electrical properties of (001)- and (116)-oriented epitaxial SrBi2Ta2O9 thin films prepared by metalorganic chemical vapor deposition

被引：93

作者：

Ishikawa, K ^{[1
]}

Funakubo, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Grad Sch Sci & Engn, Dept Innovat & Engn Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 13期

关键词：

D O I：

10.1063/1.124888

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

(001)- and (116)-oriented epitaxial SrBi2Ta2O9 (SBT) thin films were deposited on (100)SrRuO(3)parallel to(100)SrTiO3 substrates at 750 degrees C and (110)SrRuO(3)parallel to(110)SrTiO3 substrates at 820 degrees C by metalorganic chemical vapor deposition, respectively. The remanent polarization and the coercive field of the 200-nm-thick (116)-oriented SBT films normal to the substrate were 11.4 mu C/cm(2) and 80 kV/cm, respectively. The dielectric constant of this film was 140 at 1 kHz. On the other hand, the 200-nm-thick (001)-oriented SrBi2Ta2O9 films normal to the substrate showed no ferroelectricity and the dielectric constant was 70 at 1 kHz. (C) 1999 American Institute of Physics. [S0003-6951(99)05339-5].

引用

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页码：1970 / 1972

页数：3

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