Effect of deposition temperature and composition on the microstructure and electrical property of SrBi2Ta2O9 thin films prepared by metalorganic chemical vapor deposition

SrBi2Ta2O9 (SBT) thin films were prepared by conventional thermal metalorganic chemical vapor deposition (MOCVD) and subsequent heat treatment. The SBT film deposited at 500 °C had a smoother surface and better step coverage than that deposited at 750 °C. The degree of step coverage deposited at 500 °C was 0.82. An almost single phase of SBT was obtained for the film with a Bi/Ta mole ratio of 1.0 by heat treatment at 750 °C for 30 min in O2 atmosphere after MOCVD deposition at 500 °C. 2Pr and EC at an applied electric field of 620 kV/cm were 12.2 μC/cm2 and 87 kV/cm, respectively, when the film was deposited at 500 °C followed by heat treatment at 800 °C for 30 min in O2 atmosphere, and its Bi/Ta ratio was 1.2.