Electrical properties of (001)- and (116)-oriented epitaxial SrBi2Ta2O9 thin films prepared by metalorganic chemical vapor deposition

被引：93
|
作者：
Ishikawa, K [1 ]
Funakubo, H [1 ]
机构：
[1] Tokyo Inst Technol, Grad Sch Sci & Engn, Dept Innovat & Engn Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan
来源：
APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 13期
关键词：
D O I：
10.1063/1.124888
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
(001)- and (116)-oriented epitaxial SrBi2Ta2O9 (SBT) thin films were deposited on (100)SrRuO(3)parallel to(100)SrTiO3 substrates at 750 degrees C and (110)SrRuO(3)parallel to(110)SrTiO3 substrates at 820 degrees C by metalorganic chemical vapor deposition, respectively. The remanent polarization and the coercive field of the 200-nm-thick (116)-oriented SBT films normal to the substrate were 11.4 mu C/cm(2) and 80 kV/cm, respectively. The dielectric constant of this film was 140 at 1 kHz. On the other hand, the 200-nm-thick (001)-oriented SrBi2Ta2O9 films normal to the substrate showed no ferroelectricity and the dielectric constant was 70 at 1 kHz. (C) 1999 American Institute of Physics. [S0003-6951(99)05339-5].
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页码：1970 / 1972
页数：3
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