A Silicon Carbide Wireless Temperature Sensing System for High Temperature Applications

被引:36
|
作者
Yang, Jie [1 ,2 ]
机构
[1] Northeastern Univ, Shenyang 110819, Liaoning, Peoples R China
[2] Arkansas Power Elect Int Inc, Fayetteville, AR 72701 USA
关键词
silicon carbide; high temperature; wireless; temperature sensing; thermocouple; gas turbine; SENSOR; RESOLUTION; STRAIN;
D O I
10.3390/s130201884
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
In this article, an extreme environment-capable temperature sensing system based on state-of-art silicon carbide (SiC) wireless electronics is presented. In conjunction with a Pt-Pb thermocouple, the SiC wireless sensor suite is operable at 450 degrees C while under centrifugal load greater than 1,000 g. This SiC wireless temperature sensing system is designed to be non-intrusively embedded inside the gas turbine generators, acquiring the temperature information of critical components such as turbine blades, and wirelessly transmitting the information to the receiver located outside the turbine engine. A prototype system was developed and verified up to 450 degrees C through high temperature lab testing. The combination of the extreme temperature SiC wireless telemetry technology and integrated harsh environment sensors will allow for condition-based in-situ maintenance of power generators and aircraft turbines in field operation, and can be applied in many other industries requiring extreme environment monitoring and maintenance.
引用
收藏
页码:1884 / 1901
页数:18
相关论文
共 50 条
  • [21] Development of High Temperature Wireless Sensor Technology Based on Silicon Carbide Electronics
    Hunter, G. W.
    Beheim, G. M.
    Ponchak, G. E.
    Scardelletti, M. C.
    Meredith, R. D.
    Dynys, F. W.
    Neudeck, P. G.
    Jordan, J. L.
    Chen, L. Y.
    CHEMICAL SENSORS 9 -AND- MEMS/NEMS 9, 2010, 33 (08): : 269 - 281
  • [22] High-sensitivity silicon carbide divacancy-based temperature sensing
    Luo, Qin-Yue
    Zhao, Shuang
    Hu, Qi-Cheng
    Quan, Wei-Ke
    Zhu, Zi-Qi
    Li, Jia-Jun
    Wang, Jun-Feng
    NANOSCALE, 2023, 15 (18) : 8432 - 8436
  • [23] Sensing mechanisms of high temperature silicon carbide field-effect devices
    Tobias, P
    Golding, B
    Ghosh, RN
    BOSTON TRANSDUCERS'03: DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2, 2003, : 416 - 419
  • [24] Surface characterization of silicon carbide following shallow implantation of platinum ions for high temperature hydrogen sensing applications
    Muntele, Claudiu
    Budak, Satilmis
    Muntele, Iulia
    Ila, Daryush
    MATERIALS IN EXTREME ENVIRONMENTS, 2006, 929 : 105 - +
  • [25] All Screen Printed and Flexible Silicon Carbide NTC Thermistors for Temperature Sensing Applications
    Wadhwa, Arjun
    Benavides-Guerrero, Jaime
    Gratuze, Mathieu
    Bolduc, Martin
    Cloutier, Sylvain G.
    MATERIALS, 2024, 17 (11)
  • [26] Temperature-dependent optical properties of silicon carbide for wireless temperature sensors
    Dakshinamurthy, S.
    Quick, N. R.
    Kar, A.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (02) : 353 - 360
  • [27] Silicon Carbide (SiC) Antennas for High-Temperature and High-Power Applications
    Karacolak, Tutku
    Thirumalai, Rooban Venkatesh K. G.
    Merrett, J. Neil
    Koshka, Yaroslav
    Topsakal, Erdem
    IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS, 2013, 12 : 409 - 412
  • [28] Silicon carbide power devices for high temperature, high power density switching applications
    Burke, T
    Xie, K
    Flemish, JR
    Singh, H
    Podlesak, T
    Zhao, JH
    CONFERENCE RECORD OF THE 1996 TWENTY-SECOND INTERNATIONAL POWER MODULATOR SYMPOSIUM, 1996, : 18 - 21
  • [29] Recent Progress in Ohmic Contacts to Silicon Carbide for High-Temperature Applications
    Zhongtao Wang
    Wei Liu
    Chunqing Wang
    Journal of Electronic Materials, 2016, 45 : 267 - 284
  • [30] A silicon carbide capacitive pressure sensor for high temperature and harsh environment applications
    Chen, Li
    Mehregany, Mehran
    TRANSDUCERS '07 & EUROSENSORS XXI, DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2, 2007,