Silicon carbide power devices for high temperature, high power density switching applications

被引：0
|
作者：
Burke, T
Xie, K
Flemish, JR
Singh, H
Podlesak, T
Zhao, JH
机构：
来源：
CONFERENCE RECORD OF THE 1996 TWENTY-SECOND INTERNATIONAL POWER MODULATOR SYMPOSIUM | 1996年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：18 / 21
页数：4
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