Doping effect on the structure of polycrystalline silicon films grown via silane pyrolysis

被引：3
|
作者：
Kovalevskii, AA [1 ]
Borisenko, VE [1 ]
Borisevich, VM [1 ]
Dolbik, AV [1 ]
机构：
[1] Belarusian State Univ, Minsk 220027, BELARUS
来源：
INORGANIC MATERIALS | 2005年 / 41卷 / 12期
关键词：
Boron; Pyrolysis; Hydride; Germanium; Substrate Temperature;
D O I：
10.1007/s10789-005-0297-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
X-ray diffraction, transmission and scanning electron microscopy, and secondary-ion mass spectrometry data demonstrate that the grain size, structure, and composition of polycrystalline silicon (poly-Si) films grown using hydride pyrolysis depend on the GeH4 : SiH4 volume ratio in the gas mixture, dopant (boron or phosphorus) concentration, substrate temperature, and heat-treatment temperature. The films grown at substrate temperatures below 600 degrees C are amorphous, and those deposited at 600 degrees C are amorphous-crystalline. Textured poly-Si films are only obtained at 620 degrees C or higher substrate temperatures. Doping with germanium, an isovalent impurity, improves the structural perfection of poly-Si films.
引用
收藏
页码：1260 / 1265
页数：6
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