Effect of annealing on the structure of polycrystalline silicon

被引：0
|
作者：
I. M. Abdyukhanov
B. A. Prusakov
V. S. Gorelik
V. G. Plotnichenko
机构：
[1] N. É. Bauman Moscow State Engineering University,
[2] P. N. Lebedev Institute of Physics of the Russian Academy of Sciences,undefined
[3] Institute of General Physics of the Russian Academy of Sciences,undefined
来源：
Metal Science and Heat Treatment | 1998年 / 40卷
关键词：
Solar Cell; Polycrystalline Silicon; Satellite Peak; Crystalline Silicon Solar Cell; Segregation Defect;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The photoelectric method of converting solar energy is a promising and environmentally safe way of producing electric power. Sunlight can be converted into electric power by means of solar cells. The present paper concerns a study of polycrystalline silicon plates for the production of solar cells in the initial state and after heat treatment.
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页码：405 / 407
页数：2
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