Effect of hydrogen annealing on characteristics of polycrystalline silicon

被引：1
|
作者：
GOU Xianfang1)
机构：
来源：
Rare Metals | 2006年 / S1期
关键词：
multi-crystalline silicon; oxygen and carbon; minority carrier lifetime; annealing;
D O I：
暂无
中图分类号：
TN304.12 [];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
The characteristics of mc-Si used for solar cells during H2 ambient annealing at 800-1200 ℃ were investigated by means of FTIR and QSSPCD. The results reveal that grain boundaries or defects in mc-Si may facilitate the formation of oxygen precipitates, and the formation of oxygen precipitates has deleterious effect on the lifetime of mc-Si. Decreasing lifetime could result from the formation of new recombination during annealing. Additionally, It is found that hydrogen may facilitate the formation of oxygen precipitates in mc-Si. On the other hand, the diffusion of hydrogen may passivate the defects/boundaries and it is beneficial to the lifetime of mc-Si.
引用
收藏
页码：173 / 175
页数：3
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