Hydrogen in polycrystalline silicon

被引：0
|
作者：
Nickel, NH [1 ]
机构：
[1] Hahn Meitner Inst Berlin GmbH, Dept Appl Phys, D-1000 Berlin, Germany
来源：
HYDROGEN IN SEMICONDUCTORS II | 1999年 / 61卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：83 / 163
页数：81
相关论文
共 50 条
  • [1] Hydrogen equilibration in polycrystalline silicon
    von Maydell, K.
    Nickel, N. H.
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (13)
  • [2] Hydrogen migration in polycrystalline silicon
    Nickel, NH
    Jackson, WB
    Walker, J
    [J]. PHYSICAL REVIEW B, 1996, 53 (12) : 7750 - 7761
  • [3] Hydrogen transport in doped and undoped polycrystalline silicon
    Nickel, N. H.
    [J]. MICROELECTRONICS RELIABILITY, 2007, 47 (06) : 899 - 902
  • [4] COMPENSATION OF ACCEPTORS IN POLYCRYSTALLINE SILICON BY HYDROGEN IMPLANTATION
    PASQUINELLI, M
    MARTINUZZI, S
    [J]. ANNALES DE CHIMIE-SCIENCE DES MATERIAUX, 1987, 12 (4-5): : 373 - 376
  • [5] Effect of hydrogen annealing on characteristics of polycrystalline silicon
    GOU Xianfang1)
    [J]. Rare Metals, 2006, (S1) : 173 - 175
  • [6] INFLUENCE OF HYDROGEN IMPLANTATION ON THE RESISTIVITY OF POLYCRYSTALLINE SILICON
    CHEN, DL
    GREVE, DW
    GUZMAN, AM
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) : 1408 - 1410
  • [7] Hydrogen interactions with polycrystalline and amorphous silicon - Theory
    Van de Walle, CG
    [J]. HYDROGEN IN SEMICONDUCTORS II, 1999, 61 : 241 - 281
  • [8] Hydrogen-induced defects in polycrystalline silicon
    Nickel, NH
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 200 : 46 - 51
  • [9] The role of hydrogen in laser crystallized polycrystalline silicon
    Nickel, NH
    Brendel, K
    [J]. PROGRESS IN SEMICONDUCTORS II- ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2003, 744 : 249 - 254
  • [10] Hydrogen passivation of polycrystalline silicon thin films
    Scheller, L.-P.
    Weizman, M.
    Simon, P.
    Fehr, M.
    Nickel, N.H.
    [J]. Journal of Applied Physics, 2012, 112 (06):
12345