Short-period surface superlattices formed by plasma etching

被引:11
|
作者
Paltiel, Y [1 ]
Mahalu, D [1 ]
Shtrikman, H [1 ]
Bunin, G [1 ]
Meirav, U [1 ]
机构
[1] WEIZMANN INST SCI,DEPT CONDENSED MATTER PHYS,IL-76100 REHOVOT,ISRAEL
关键词
D O I
10.1088/0268-1242/12/8/010
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the development of a process for fabricating etched surface superlattices (SSL). We utilize few-voltage electron cyclotron resonance plasma etching in conjunction with electron beam lithography to form a short-pitch grating relief on GaAs/AlGaAs heterostructures hosting a high-mobility two-dimensional electron gas (2DEG). The process minimizes damage to the 2DEG and results in highly uniform etched gratings. A Schottky gate covering the etched surface appears to improve the electrical properties of the SSLs. Magnetotransport measurements show the effectiveness of this technique in realizing high-quality SSLs with periods down to 100 nm.
引用
收藏
页码:987 / 990
页数:4
相关论文
共 50 条
  • [31] OPTICAL-PROPERTIES OF SHORT-PERIOD GAAS/AIGAAS SUPERLATTICES
    CHOMETTE, A
    DEVEAUD, B
    CLEROT, F
    LAMBERT, B
    REGRENY, A
    JOURNAL OF LUMINESCENCE, 1989, 44 (4-6) : 265 - 276
  • [32] Aluminum gallium nitride short-period superlattices doped with magnesium
    Saxler, A
    Mitchel, WC
    Kung, P
    Razeghi, M
    APPLIED PHYSICS LETTERS, 1999, 74 (14) : 2023 - 2025
  • [33] REFRACTIVE-INDEXES OF (ALAS)(GAAS) SHORT-PERIOD SUPERLATTICES
    BLOOD, P
    FLETCHER, ED
    FOXON, CT
    MURDIN, BN
    LACKLISON, DE
    OPTICAL AND QUANTUM ELECTRONICS, 1991, 23 (07) : S895 - S900
  • [34] Electron and hole scattering in short-period InGaAs/InP superlattices
    Pusep, Yu. A.
    Gold, A.
    Mamani, N. C.
    de Godoy, M. P. F.
    Galvao Gobato, Y.
    LaPierre, R. R.
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (07)
  • [35] INDIRECT DIRECT SWITCHING OF GAAS/ALAS SHORT-PERIOD SUPERLATTICES
    MEYNADIER, MH
    NAHORY, RE
    WORLOCK, JM
    TAMARGO, MC
    DEMIGUEL, JL
    JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S5 - S5
  • [36] Purcell Effect Apparent in Vertical Transport in Short-Period Superlattices
    Altukhov, I. V.
    Baranov, A. N.
    Il'inskaya, N. D.
    Kagan, M. S.
    Khazanova, S. V.
    Paprotskiy, S. K.
    Teissier, R.
    Usikova, A. A.
    2012 37TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2012,
  • [37] Coherent Raman spectroscopy of CdTe/MnTe short-period superlattices
    Rupprecht, R
    Pascher, H
    Krenn, H
    Faschinger, W
    Bauer, G
    PHYSICAL REVIEW B, 2001, 63 (11)
  • [38] VALIDITY OF THE CONTINUUM APPROACH TO OPTICAL PHONONS IN SHORT-PERIOD SUPERLATTICES
    BECHSTEDT, F
    GERECKE, H
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1990, 2 (19) : 4363 - 4369
  • [39] PHOTOCONDUCTIVITY IN SILICON DOPED ALAS/GAAS SHORT-PERIOD SUPERLATTICES
    JEANJEAN, P
    SICART, J
    ROBERT, JL
    MOLLOT, F
    PLANEL, R
    SUPERLATTICES AND MICROSTRUCTURES, 1990, 8 (03) : 345 - 348
  • [40] CHARACTERIZATION OF SHORT-PERIOD ZNTE ZNS SUPERLATTICES GROWN BY MBE
    KARASAWA, T
    OHKAWA, K
    MITSUYU, T
    JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 464 - 467