A higher-k tetragonal HfO2 formed by chlorine plasma treatment at interfacial layer for metal-oxide-semiconductor devices

被引：27

作者：

Fu, Chung-Hao ^{[1
]}

Chang-Liao, Kuei-Shu ^{[1
]}

Li, Chen-Chien ^{[1
]}

Ye, Zong-Hao ^{[1
]}

Hsu, Fang-Ming ^{[1
]}

Wang, Tien-Ko ^{[1
]}

Lee, Yao-Jen ^{[1
]}

Tsai, Ming-Jinn ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30013, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 03期

关键词：

GATE; FILMS; MOSFET; SI;

D O I：

10.1063/1.4737393

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A tetragonal HfO2 (t-HfO2) with higher-k value and large band gap is investigated in this work. X-ray diffraction analysis shows a t-HfO2 can be formed by using Cl-2 plasma treatment at the HfO2/Si interface after a post deposition annealing at 650 degrees C. The mechanisms of t-HfO2 formation can be attributed to the Si diffusion and oxygen vacancy generation which are formed by Cl-2 plasma treatment. From the cross-sectional transmission electron microscope and capacitance-voltage measurement, the k value of this t-HfO2 is estimated to be about 35. The optical band gap value for t-HfO2 is similar to that of the monoclinic. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737393]

引用

页数：4

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