Memory Effects in a Al/Ti:HfO2/CuPc Metal-Oxide-Semiconductor Device

被引：0
|
作者：
Tripathi, Udbhav [1 ]
Kaur, Ramneek [2 ]
机构：
[1] VIT Univ, Sch Elect Engn, Vellore, Tamil Nadu, India
[2] Panjab Univ, Dept Phys, Ctr Adv Study Phys, Chandigarh 160014, India
来源：
DAE SOLID STATE PHYSICS SYMPOSIUM 2015 | 2016年 / 1731卷
关键词：
bistability; memory devices; electronic transport; ANNEALING TEMPERATURE; DIELECTRICS; MECHANISM;
D O I：
10.1063/1.4947815
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Metal oxide semiconductor structured organic memory device has been successfully fabricated. Ti doped hafnium oxide (Ti:HfO2) nanoparticles has been fabricated by precipitation method and further calcinated at 800 degrees C. Copper phthalocyanine, a hole transporting material has been utilized as an organic semiconductor. The electrical properties of the fabricated device have been studied by measuring the current-voltage and capacitance-voltage characteristics. The amount of charge stored in the nanoparticles has been calculated by using flat band condition. This simple approach for fabricating MOS memory device has opens up opportunities for the development of next generation memory devices.
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页数：3
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