High-power diode-pumped AlGaAs surface-emitting laser

被引：26
|
作者：
Holm, MA [1 ]
Burns, D [1 ]
Cusumano, P [1 ]
Ferguson, AI [1 ]
Dawson, MD [1 ]
机构：
[1] Univ Strathclyde, Wolfson Ctr, Inst Photon, Glasgow G4 0NW, Lanark, Scotland
来源：
APPLIED OPTICS | 1999年 / 38卷 / 27期
关键词：
D O I：
10.1364/AO.38.005781
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report the development and characterization of an efficient diode-pumped surface-emitting semiconductor laser operating at similar to 870 nm. Hy using a semiconductor Bragg reflector stack/multiple GaAs quantum well structure, mounted within a conventional laser cavity, we achieved single transverse mode laser output powers of 153 mW. Self-tuning over a 15-nm spectral range has been obtained. (C) 1999 Optical Society of America OCIS codes: 140.3480, 140.6630,250.7270.
引用
收藏
页码：5781 / 5784
页数：4
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