High-power diode-pumped AlGaAs surface-emitting laser

被引：26

作者：

Holm, MA ^{[1
]}

Burns, D ^{[1
]}

Cusumano, P ^{[1
]}

Ferguson, AI ^{[1
]}

Dawson, MD ^{[1
]}

机构：

[1] Univ Strathclyde, Wolfson Ctr, Inst Photon, Glasgow G4 0NW, Lanark, Scotland

来源：

APPLIED OPTICS | 1999年 / 38卷 / 27期

关键词：

D O I：

10.1364/AO.38.005781

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report the development and characterization of an efficient diode-pumped surface-emitting semiconductor laser operating at similar to 870 nm. Hy using a semiconductor Bragg reflector stack/multiple GaAs quantum well structure, mounted within a conventional laser cavity, we achieved single transverse mode laser output powers of 153 mW. Self-tuning over a 15-nm spectral range has been obtained. (C) 1999 Optical Society of America OCIS codes: 140.3480, 140.6630,250.7270.

引用

页码：5781 / 5784

页数：4

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