Passively mode-locked diode-pumped surface-emitting semiconductor laser

被引：171
|
作者：
Hoogland, S [1 ]
Dhanjal, S
Tropper, AC
Roberts, JS
Häring, R
Paschotta, R
Morier-Genoud, F
Keller, U
机构：
[1] Univ Southampton, Dept Phys & Astron, Southampton SO17 1BJ, Hants, England
[2] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Cent Facil 3 5 Semicond, Sheffield S1 3JD, S Yorkshire, England
[3] ETH Honggerberg, HPT, Swiss Fed Inst Technol, Inst Quantum Elect, CH-8093 Zurich, Switzerland
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 09期
关键词：
diode-pumped laser; semiconductor laser; ultrashort pulses;
D O I：
10.1109/68.874213
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A surface-emitting semiconductor laser has been passively mode locked in an external cavity incorporating a semiconductor saturable absorber mirror, The gain medium consists of a stack of 12 InGaAs/GaAs strained quantum wells, grown above a Bragg mirror structure, and pumped optically by a high-brightness diode laser. The mode-locked laser emits pulses of 22-ps full-width at half maximum duration at 1030 nm, with a repetition rate variable around 4.4 GHz.
引用
收藏
页码：1135 / 1137
页数：3
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