Low-temperature growth and structural characterization of GaAs using ionized source beam epitaxy

被引：0
|
作者：
Roh, DW [1 ]
Kim, K [1 ]
机构：
[1] ELECTR & TELECOMMUN RES INST, TAEJON 305606, SOUTH KOREA
来源：
EVOLUTION OF EPITAXIAL STRUCTURE AND MORPHOLOGY | 1996年 / 399卷
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D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
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页码：23 / 28
页数：6
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