Advanced ring type contact technology for high density phase change memory

被引：14

作者：

Song, YJ ^{[1
]}

Park, JH ^{[1
]}

Lee, SY ^{[1
]}

Park, JH ^{[1
]}

Hwang, YN ^{[1
]}

Lee, SH ^{[1
]}

Ryoo, KC ^{[1
]}

Ahn, SJ ^{[1
]}

Jeong, CW ^{[1
]}

Shin, JM ^{[1
]}

Jeong, WC ^{[1
]}

Koh, KH ^{[1
]}

Jeong, GT ^{[1
]}

Jeong, HS ^{[1
]}

Kim, KN ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Adv Technol Team, Yongin 449900, Kyunggi, South Korea

来源：

PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2005年

关键词：

D O I：

10.1109/ESSDER.2005.1546697

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Advanced bottom electrode contact (BEC) scheme was successfully developed for fabricating reliable high density 64 Mb PRAM by using ring type contact scheme. This advanced ring type BEC scheme was prepared by depositing very thin TiN films inside a contact hole, and then core dielectrics was uniformly filled into the TiN-deposited contact hole. Using this novel contact scheme, it was possible to reduce a reset current with low set resistance, and also maintain a uniform cell distribution. Thus, it is clearly demonstrated that the ring type BEC technology can exhibit strong feasibility of high density 256 Mb PRAM and beyond.

引用

页码：513 / 516

页数：4

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