Advanced ring type contact technology for high density phase change memory

被引：14

作者：

Song, YJ ^{[1
]}

Park, JH ^{[1
]}

Lee, SY ^{[1
]}

Park, JH ^{[1
]}

Hwang, YN ^{[1
]}

Lee, SH ^{[1
]}

Ryoo, KC ^{[1
]}

Ahn, SJ ^{[1
]}

Jeong, CW ^{[1
]}

Shin, JM ^{[1
]}

Jeong, WC ^{[1
]}

Koh, KH ^{[1
]}

Jeong, GT ^{[1
]}

Jeong, HS ^{[1
]}

Kim, KN ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Adv Technol Team, Yongin 449900, Kyunggi, South Korea

来源：

PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2005年

关键词：

D O I：

10.1109/ESSDER.2005.1546697

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Advanced bottom electrode contact (BEC) scheme was successfully developed for fabricating reliable high density 64 Mb PRAM by using ring type contact scheme. This advanced ring type BEC scheme was prepared by depositing very thin TiN films inside a contact hole, and then core dielectrics was uniformly filled into the TiN-deposited contact hole. Using this novel contact scheme, it was possible to reduce a reset current with low set resistance, and also maintain a uniform cell distribution. Thus, it is clearly demonstrated that the ring type BEC technology can exhibit strong feasibility of high density 256 Mb PRAM and beyond.

引用

页码：513 / 516

页数：4

共 50 条

[21] Current density enhancement nano-contact phase-change memory for low writing current
Yin, You
Hosaka, Sumio
Park, Woon Ik
Jung, Yeon Sik
Lee, Keon Jae
You, Byoung Kuk
Liu, Yang
Yu, Qi
APPLIED PHYSICS LETTERS, 2013, 103 (03)
[22] Highly manufacturable high density phase change memory of 64Mb and beyond
Ahn, SJ
Song, YJ
Jeong, CW
Shin, JM
Fai, Y
Hwang, YN
Lee, SH
Ryoo, KC
Lee, SY
Park, JH
Horii, H
Ha, YH
Yi, JH
Kuh, BJ
Koh, GH
Jeong, GT
Jeong, HS
Kim, K
Ryu, BI
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 907 - 910
[23] HIGH CONTACT DENSITY MEMORY MODULE SOCKET DESIGN
PIORUNNECK, H
JUNTWAIT, E
PROCEEDING OF THE TECHNICAL PROGRAM OF NEPCON WEST 89, VOLS 1 AND 2, 1989, : 1864 - 1873
[24] Threshold-voltage modulated phase change heterojunction for application of high density memory
Yan, Baihan
Tong, Hao
Qian, Hang
Miao, Xiangshui
APPLIED PHYSICS LETTERS, 2015, 107 (13)
[25] Materials and other needs for advanced phase change memory
Sosa, Norma E.
CARBON NANOTUBES, GRAPHENE, AND EMERGING 2D MATERIALS FOR ELECTRONIC AND PHOTONIC DEVICES VIII, 2015, 9552
[26] Fabrication of high density nano-pillar type phase change memory devices using flexible AAO shaped template
Hong, Sung-Hoon
Bae, Byeong-Ju
Lee, Heon
Jeong, Jun-Ho
MICROELECTRONIC ENGINEERING, 2010, 87 (11) : 2081 - 2084
[27] Scaling analysis of phase-change memory technology
Pirovano, A
Lacaita, AL
Benvenuti, A
Pellizzer, F
Hudgens, S
Bez, R
2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 2003, : 699 - 702
[28] Recent Progress in Phase-Change Memory Technology
Burr, Geoffrey W.
Brightsky, Matthew J.
Sebastian, Abu
Cheng, Huai-Yu
Wu, Jau-Yi
Kim, Sangbum
Sosa, Norma E.
Papandreou, Nikolaos
Lung, Hsiang-Lan
Pozidis, Haralampos
Eleftheriou, Evangelos
Lam, Chung H.
IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS, 2016, 6 (02) : 146 - 162
[29] Phase-change memory technology for embedded applications
Ottogalli, F
Pirovano, A
Pellizzer, F
Tosi, M
Zuliani, P
Bonetalli, P
Bez, R
ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2004, : 293 - 296
[30] PHASE-CHANGE TECHNOLOGY AND THE FUTURE OF MAIN MEMORY
Lee, Benjamin C.
Zhou, Ping
Yang, Jun
Zhang, Youtao
Zhao, Bo
Ipek, Engin
Mutlu, Onur
Burger, Doug
IEEE MICRO, 2010, 30 (01) : 131 - 141

← 1 2 3 4 5 →