Advanced ring type contact technology for high density phase change memory

被引：14

作者：

Song, YJ ^{[1
]}

Park, JH ^{[1
]}

Lee, SY ^{[1
]}

Park, JH ^{[1
]}

Hwang, YN ^{[1
]}

Lee, SH ^{[1
]}

Ryoo, KC ^{[1
]}

Ahn, SJ ^{[1
]}

Jeong, CW ^{[1
]}

Shin, JM ^{[1
]}

Jeong, WC ^{[1
]}

Koh, KH ^{[1
]}

Jeong, GT ^{[1
]}

Jeong, HS ^{[1
]}

Kim, KN ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Adv Technol Team, Yongin 449900, Kyunggi, South Korea

来源：

PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2005年

关键词：

D O I：

10.1109/ESSDER.2005.1546697

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Advanced bottom electrode contact (BEC) scheme was successfully developed for fabricating reliable high density 64 Mb PRAM by using ring type contact scheme. This advanced ring type BEC scheme was prepared by depositing very thin TiN films inside a contact hole, and then core dielectrics was uniformly filled into the TiN-deposited contact hole. Using this novel contact scheme, it was possible to reduce a reset current with low set resistance, and also maintain a uniform cell distribution. Thus, it is clearly demonstrated that the ring type BEC technology can exhibit strong feasibility of high density 256 Mb PRAM and beyond.

引用

页码：513 / 516

页数：4

共 50 条

[1] Highly reliable ring-type contact for high-density phase change memory
Jeong, Chang-Wook
Ahn, Su-Jin
Hwang, Young-Nam
Song, Yoon-Jong
Oh, Jac-Hee
Lee, Su-Youn
Lee, Se-Ho
Ryoo, Kyung-Chang
Park, Jong-Hyun
Park, Jae-Hyun
Shin, Jac-Min
Yeung, Fai
Jeong, Won-Cheol
Kim, Jeong-In
Koh, Gwan-Hyeob
Jeong, Gi-Tae
Jeong, Hong-Sik
Kim, Kinam
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4B): : 3233 - 3237
[2] Ring contact electrode process for high density phase change random access memory
Ryoo, Kyung-Chang
Song, Yoon Jong
Shin, Jae-Min
Park, Sang-Su
Lim, Dong-Won
Kim, Jae-Hyun
Park, Woon-Ik
Sim, Ku-Ri
Jeong, Ji-Hyun
Kang, Dae-Hwan
Kong, Jun-Hyuck
Jeong, Chang-Wook
Oh, Jae-Hee
Park, Jae-Hyun
Kim, Jeong-In
Oh, Yong-Tae
Kim, Ji-Sun
Eun, Seong-Ho
Lee, Kwang-Woo
Koh, Seong-Pil
Fai, Yung
Koh, Gwan-Hyob
Jeong, Gi-Tae
Jeong, Hong-Sik
Kim, Kinam
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4B): : 2001 - 2005
[3] High Density PCM(Phase Change Memory) Technology
Jeong, Hongsik
2016 INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC), 2016, : 187 - 188
[4] Full integration of highly reliable phase change memory with advanced ring type bottom electrode contact
Shin, J. M.
Song, Y. J.
Kang, D. W.
Jeong, C. W.
Ryoo, K. C.
Park, J. H.
Oh, J. H.
Kong, J. H.
Jae
Park
Fai, Y.
Oh, Y. T.
Kim, J. I.
Lim, D. W.
Park, S.
Kim, J. H.
Kim, J. S.
Kim, Y. T.
Koh, G. H.
Jeong, G. T.
Jeong, H. S.
Kim, Kinam
INTEGRATED FERROELECTRICS, 2007, 90 : 88 - +
[5] Nonvolatile, high density, high performance phase change memory
Wicker, G
EDUCATION IN MICROELECTRONICS AND MEMS, 1999, 3894 : 2 - 9
[6] Nonvolatile, high density, high performance phase change memory
Wicker, G
DEVICE AND PROCESS TECHNOLOGIES FOR MEMS AND MICROELECTRONICS, 1999, 3892 : 2 - 9
[7] Nonvolatile, high density, high performance phase change memory
Wicker, G
DESIGN, CHARACTERIZATION, AND PACKAGING FOR MEMS AND MICROELECTRONICS, 1999, 3893 : 2 - 9
[8] Nonvolatile, high density, high performance phase change memory
Wicker, G
ELECTRONICS AND STRUCTURES FOR MEMS, 1999, 3891 : 2 - 9
[9] Design of Side Bottom-Electrode-Contact for High Density Phase-Change Memory Array
Liu, Yan
Song, Zhitang
Liu, Bo
Xu, Jia
Chen, Houpeng
Zhang, Chao
Wu, Guanping
Feng, Songlin
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (10) : 7939 - 7943
[10] Nonvolatile, high density, high performance phase-change memory
Tyson, S
Wicker, G
Lowrey, T
Hudgens, S
Hunt, K
2000 IEEE AEROSPACE CONFERENCE PROCEEDINGS, VOL 5, 2000, : 385 - 390

← 1 2 3 4 5 →