Thin-film transistors using DNA-wrapped semiconducting single-wall carbon nanotubes with selected chiralities

被引：1

作者：

Kuwahara, Yuki ^{[1
,2
]}

Nihey, Fumiyuki ^{[2
,3
]}

Ohmori, Shigekazu ^{[1
,2
]}

Saito, Takeshi ^{[1
,2
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058565, Japan

[2] Technol Res Assoc Single Wall Carbon Nanotubes TA, Tsukuba, Ibaraki 3058565, Japan

[3] NEC Corp Ltd, Smart Energy Res Labs, Tsukuba, Ibaraki 3058501, Japan

来源：

APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 10期

关键词：

HIGH-PERFORMANCE; DEPENDENT PERFORMANCE; SEPARATION; CHROMATOGRAPHY; NETWORKS; ORIGAMI;

D O I：

10.7567/APEX.8.105101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Selected semiconducting chiralities, (7, 5), (7, 6), and (8, 4), of DNA-wrapped single-wall carbon nanotubes (DNA-SWCNTs) were used for thin-film transistors (TFTs). Chirality separation was carried out by ion exchange chromatography (IEX) with the ssDNA of the (TAT)(4) sequence. An on/off ratio of 3.8 x 10(6) with a carrier mobility of 11cm(2)/(V.s) was successfully achieved in the fabricated SWCNT-TFTs. The comparison between the on/off ratios obtained before (10(1)-10(2)) and after IEX (10(4)-10(7)) indicated that the IEX separation process sufficiently improves the performance of SWCNT-TFTs because of the reducing metallic SWCNT pathways in the TFT channel. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

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