Effect of Single-Wall Carbon Nanotube Doping on Solution-Processed Indium Oxide Thin-Film Transistors

p-type conductivity often observed in single-wall carbon nanotube (SW-CNT) thin-film transistors (TFTs) is usually attributed to the doping effect of oxygen adsorption when SW-CNT are exposed to air caused by differences in the figure of merit, which results in asymmetric electron and hole injection. We performed comparative tests by doping SW-CNTs into the Indium oxide (In2O3/SW- CNT) channel layer, fabricated semiconductor devices, and investigated the device performance and film properties. It was determined that both In2O3 and In2O3/SW-CNT devices exhibit n-type behavior with significant saturation behavior and gate control under positive bias. The In2O3/SW-CNT TFTs have higher saturation mobility (mu (sat)) and on/off current ratio (I-ON/I-OFF). In particular, the mu ( sat) is increased by similar to 3 times, and the I- ON /I- OFF is increased to similar to 10 (6) . Also, under negative bias stress (NBS), it exhibits better stability and signal inversion capability by resistive loading of the inverter. These results indicate that solution- prepared In2O3/SW-CNT TFTs can be used in low-cost, low-temperature, high-performance electronic devices.