Ruffle TiO2-X/TiO2 Layer based Resistive-Switching-Memory driven by Low Voltage using Rapid-Thermal-Annealing

The resistive switching properties driven by low voltage in a nano-scale resistive-random-access-memory device composed of Al(top)/TiO2-X/TiO2/Al(bottom) were investigated in this paper. TiO2-X and TiO2 layers were deposited by the atomic layer deposition method and a TiO2-X layer was added during the process of rapid-thermal-annealing at 600 degrees C to induce oxygen vacancies. Structural analyses by using X-ray diffraction suggested that the TiO2-X film annealed at this temperature changes from an amorphous to a rutile phase. The oxygen vacancies of the TiO2-X region acted as traps for electrons and led to memory behavior. The device exhibited resistive-random-access-memory behavior consistent with resistive switching properties such as a high current on/off ratio greater than 1000:1, low-voltage driving less of han 0.5 V, and nonvolatility for over 1.0 x 10(5)s.