Tuning the resistive switching properties of TiO2-x films

被引：33
|
作者：
Ghenzi, N. [1 ,2 ,3 ]
Rozenberg, M. J. [4 ,5 ]
Llopis, R. [3 ]
Levy, P. [1 ,6 ]
Hueso, L. E. [3 ,7 ]
Stoliar, P. [2 ,3 ]
机构：
[1] Comis Nacl Energia Atom, Ctr Atom Constituyentes, GAIANN, RA-1429 Buenos Aires, DF, Argentina
[2] Univ Nacl San Martin, ECyT, RA-1650 San Martin, Argentina
[3] CIC nanoGUNE, Donostia San Sebastian 20018, Basque Country, Spain
[4] Univ Paris 11, UMR8502, Phys Solides Lab, F-91405 Orsay, France
[5] UBA, FCEN, Dept Fis Juan Jose Giambiagi, Buenos Aires, DF, Argentina
[6] Consejo Nacl Invest Cient & Tecn, RA-1033 Buenos Aires, DF, Argentina
[7] Basque Fdn Sci, Ikerbasque, Bilbao 48011, Basque Country, Spain
来源：
APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 12期
关键词：
AVALANCHE BREAKDOWN; MEMORIES; GAP;
D O I：
10.1063/1.4916516
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively different device characteristics were accessed in the same system, namely, standard bipolar resistive switching, electroforming-free devices, and devices with multi-step breakdown. We propose that small variations in the oxygen/argon flow ratio result in relevant changes of the oxygen vacancy concentration, which is the key parameter determining the resistive switching behavior. The coexistence of percolative or non-percolative conductive filaments is also discussed. Finally, the hypothesis is verified by means of the temperature dependence of the devices in low resistance state. (C) 2015 AIP Publishing LLC.
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页数：4
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