Hamming network circuits based on CMOS/memristor hybrid design

被引：10
|
作者：
Zhu, Xuan [1 ,2 ]
Yang, Xuejun [1 ,2 ]
Wu, Chunqing [2 ]
Wu, Junjie [1 ,2 ]
Yi, Xun [1 ,2 ]
机构：
[1] Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha, Hunan, Peoples R China
[2] Natl Univ Def Technol, Sch Comp, Changsha, Hunan, Peoples R China
来源：
IEICE ELECTRONICS EXPRESS | 2013年 / 10卷 / 12期
关键词：
hamming network; memristor; nanocrossbar; neural networks; MEMRISTOR DEVICE;
D O I：
10.1587/elex.10.20130404
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Memristor, as an innovative technology, has been proposed in the application of neural networks since its physical implementation was reported by HP lab. In this paper, we proposed a Hamming network circuits based on CMOS/memristor hybrid design which is compact in device size and circuit structure. Through HSPICE simulation, pattern recognition and classification functions of hamming network circuits are demonstrated using a 16 x 16 nanocrossbar memory.
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页数：9
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